Radiation hardened memory cell design and verification of memory macros at RTL level

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dc.contributor.advisor Mekie, Joycee
dc.contributor.author Agarwal, Tushar
dc.date.accessioned 2021-10-27T14:12:42Z
dc.date.available 2021-10-27T14:12:42Z
dc.date.issued 2021
dc.identifier.citation Agarwal, Tushar (2021). Radiation hardened memory cell design and verification of memory macros at RTL level. Gandhinagar: Indian Institute of Technology Gandhinagar, 130p. (Acc. No.: T00885).
dc.identifier.uri https://repository.iitgn.ac.in/handle/123456789/7176
dc.description.statementofresponsibility by Tushar Agarwal
dc.format.extent xiv, 130 p.: ill.; 30 cm.
dc.language.iso en_US
dc.publisher Indian Institute of Technology Gandhinagar
dc.title Radiation hardened memory cell design and verification of memory macros at RTL level
dc.type Thesis
dc.contributor.department Electrical Engineering
dc.description.degree M.Tech


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