Unified theory of the capacitance behavior in LDMOS devices

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dc.contributor.author Kaushal, Kumari Neeraj
dc.contributor.author Mohapatra, Nihar Ranjan
dc.coverage.spatial United States of America
dc.date.accessioned 2021-12-24T11:50:54Z
dc.date.available 2021-12-24T11:50:54Z
dc.date.issued 2022-01
dc.identifier.citation Kaushal, Kumari Neeraj and Mohapatra, Nihar Ranjan, “Unified theory of the capacitance behavior in LDMOS devices”, IEEE Transactions on Electron Devices, DOI: 10.1109/TED.2021.3131302, vol. 69, no. 1, pp. 39-44, Jan. 2022. en_US
dc.identifier.issn 1557-9646
dc.identifier.issn 0018-9383
dc.identifier.uri https://doi.org/10.1109/TED.2021.3131302
dc.identifier.uri https://repository.iitgn.ac.in/handle/123456789/7359
dc.description.abstract This article reviews and provides physical insights into the anomalous capacitance behavior of laterally diffused MOS (LDMOS) transistors. It is shown that the modulation of channel/drift junction potential with VG , VD , and VS is primarily responsible for the capacitance peaks observed at different bias conditions. The VGS at which these capacitances peak and their magnitude depends on the channel doping gradient (CDG) and drift region parameters. Simple mathematical models valid across all bias regimes are proposed to explain the anomalous behavior. Different LDMOS device designs are also suggested to mitigate or delay the capacitance peaks
dc.description.statementofresponsibility by Kumari Neeraj Kaushal and Nihar Ranjan Mohapatra
dc.format.extent vol. 69, no. 1, pp. 39-44
dc.language.iso en_US en_US
dc.publisher Institute of Electrical and Electronics Engineers en_US
dc.subject Capacitance peak en_US
dc.subject Channel doping gradient (CDG) en_US
dc.subject Drift resistance en_US
dc.subject Field plate en_US
dc.subject Laterally diffused MOS (LDMOS) en_US
dc.subject Space charge modulation (SCM) en_US
dc.subject Unified capacitance theory en_US
dc.title Unified theory of the capacitance behavior in LDMOS devices en_US
dc.type Article en_US
dc.relation.journal IEEE Transactions on Electron Devices

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