dc.contributor.author |
Ahmad, Inzamam |
|
dc.contributor.author |
Kumar, Ravinder |
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dc.contributor.author |
Ghosh, Uddipta |
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dc.contributor.author |
Bhargav, Atul |
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dc.contributor.other |
23rd IEEE International Conference on Nanotechnology (NANO 2023) |
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dc.coverage.spatial |
South Korea |
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dc.date.accessioned |
2023-09-15T15:13:53Z |
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dc.date.available |
2023-09-15T15:13:53Z |
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dc.date.issued |
2023-07-02 |
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dc.identifier.citation |
Ahmad, Inzamam; Kumar, Ravinder; Ghosh, Uddipta and Bhargav, Atul, "Reduction of Schottky barrier height for Au-WS2 interface with iodine doping - a physical insight", in the 23rd IEEE International Conference on Nanotechnology (NANO 2023), Jeju City, KR, Jul. 02-05, 2023. |
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dc.identifier.uri |
https://doi.org/10.1109/NANO58406.2023.10231183 |
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dc.identifier.uri |
https://repository.iitgn.ac.in/handle/123456789/9174 |
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dc.description.abstract |
In this work, using Density functional theory (DFT) simulations, we have shown the reduction of Schottky Barrier Height (SBH) for Au-WS 2 interface with Iodine doping. The detailed physics behind this observation is also discussed. The Iodine (I) dopant is found to be an ideal donor than Chlorine (Cl) and Bromine (Br) because of its less electronegativity and larger atomic size. This fact is verified and supported by Mulliken analysis. Also, the I-doped structure is more stable, which can be observed from the interfacial distance and work of separation calculation. We have also validated this molecular doping at the contact part of the electrode region in a two-terminal device using Non-Equilibrium Greens Function (NEGF) formalism. In this work, all monolayer, interface, and device analyses show that Iodine is a better n-type dopant compared to Cl. |
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dc.description.statementofresponsibility |
by Inzamam Ahmad, Ravinder Kumar, Uddipta Ghosh and Atul Bhargav |
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dc.language.iso |
en_US |
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dc.publisher |
Institute of Electrical and Electronics Engineers (IEEE) |
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dc.subject |
Atomic layer deposition |
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dc.subject |
Schottky barriers |
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dc.subject |
Chlorine |
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dc.subject |
Doping |
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dc.subject |
Nanoscale devices |
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dc.subject |
Semiconductor process modeling |
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dc.subject |
Green's function methods |
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dc.title |
Reduction of Schottky barrier height for Au-WS2 interface with iodine doping - a physical insight |
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dc.type |
Conference Paper |
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