Reduction of Schottky barrier height for Au-WS2 interface with iodine doping - a physical insight

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dc.contributor.author Ahmad, Inzamam
dc.contributor.author Kumar, Ravinder
dc.contributor.author Ghosh, Uddipta
dc.contributor.author Bhargav, Atul
dc.contributor.other 23rd IEEE International Conference on Nanotechnology (NANO 2023)
dc.coverage.spatial South Korea
dc.date.accessioned 2023-09-15T15:13:53Z
dc.date.available 2023-09-15T15:13:53Z
dc.date.issued 2023-07-02
dc.identifier.citation Ahmad, Inzamam; Kumar, Ravinder; Ghosh, Uddipta and Bhargav, Atul, "Reduction of Schottky barrier height for Au-WS2 interface with iodine doping - a physical insight", in the 23rd IEEE International Conference on Nanotechnology (NANO 2023), Jeju City, KR, Jul. 02-05, 2023.
dc.identifier.uri https://doi.org/10.1109/NANO58406.2023.10231183
dc.identifier.uri https://repository.iitgn.ac.in/handle/123456789/9174
dc.description.abstract In this work, using Density functional theory (DFT) simulations, we have shown the reduction of Schottky Barrier Height (SBH) for Au-WS 2 interface with Iodine doping. The detailed physics behind this observation is also discussed. The Iodine (I) dopant is found to be an ideal donor than Chlorine (Cl) and Bromine (Br) because of its less electronegativity and larger atomic size. This fact is verified and supported by Mulliken analysis. Also, the I-doped structure is more stable, which can be observed from the interfacial distance and work of separation calculation. We have also validated this molecular doping at the contact part of the electrode region in a two-terminal device using Non-Equilibrium Greens Function (NEGF) formalism. In this work, all monolayer, interface, and device analyses show that Iodine is a better n-type dopant compared to Cl.
dc.description.statementofresponsibility by Inzamam Ahmad, Ravinder Kumar, Uddipta Ghosh and Atul Bhargav
dc.language.iso en_US
dc.publisher Institute of Electrical and Electronics Engineers (IEEE)
dc.subject Atomic layer deposition
dc.subject Schottky barriers
dc.subject Chlorine
dc.subject Doping
dc.subject Nanoscale devices
dc.subject Semiconductor process modeling
dc.subject Green's function methods
dc.title Reduction of Schottky barrier height for Au-WS2 interface with iodine doping - a physical insight
dc.type Conference Paper


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