Compact modeling of LDMOS transistors over a wide temperature range including cryogenics

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dc.contributor.author Machhiwar, Yogendra
dc.contributor.author Gill, Garima
dc.contributor.author Kaushal, Kumari Neeraj
dc.contributor.author Mohapatra, Nihar Ranjan
dc.contributor.author Agarwal, Harshit
dc.coverage.spatial United States of America
dc.date.accessioned 2023-11-09T11:12:59Z
dc.date.available 2023-11-09T11:12:59Z
dc.date.issued 2024-01
dc.identifier.citation Machhiwar, Yogendra; Gill, Garima; Kaushal, Kumari Neeraj; Mohapatra, Nihar Ranjan; Agarwal, Harshit, "Compact modeling of LDMOS transistors over a wide temperature range including cryogenics", IEEE Transactions on Electron Devices, DOI: 10.1109/TED.2023.3326107, vol. 71, no. 1, pp. 77-83, Jan. 2024.
dc.identifier.issn 0018-9383
dc.identifier.issn 1557-9646
dc.identifier.uri https://doi.org/10.1109/TED.2023.3326107
dc.identifier.uri https://repository.iitgn.ac.in/handle/123456789/9427
dc.description.abstract An improved compact model of high-voltage laterally diffused MOS (LDMOS) transistors valid over a wide temperature range including cryogenic is presented. The existing BSIM-BULK HV compact model is improved to include carrier freeze-out and field-assisted ionization models, which are key for the HV devices. In addition, temperature dependence of mobility, flat-band voltage, and saturation velocity models are also improved for application to cryogenic temperatures. The proposed model is implemented within the framework of the BSIM-BULK HV compact model and shows excellent capability in modeling experimental LDMOS transistor data for temperatures between 300 and 77 K.
dc.description.statementofresponsibility by Yogendra Machhiwar, Garima Gill, Kumari Neeraj Kaushal, Nihar Ranjan Mohapatra and Harshit Agarwal
dc.format.extent vol. 71, no. 1, pp. 77-83
dc.language.iso en_US
dc.publisher Institute of Electrical and Electronics Engineers
dc.subject BSIM-BULK
dc.subject Carrier freeze-out
dc.subject Complementary metal-oxide-semiconductor (CMOS)
dc.subject Cryogenic
dc.subject Laterally diffused MOS (LDMOS)
dc.subject Semiconductor device modeling
dc.title Compact modeling of LDMOS transistors over a wide temperature range including cryogenics
dc.type Article
dc.relation.journal IEEE Transactions on Electron Devices


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