Impact of BOX thickness and ground-plane on non-linearity of UTBB FD-SOI MOS transistors

This work investigates, for the first time, the impact of BOX thickness (T<inf>box</inf>) and Ground-plane (GP) on the non-linearity of transistors fabricated using UTBB FD-SOI CMOS technology. By extracting 2^nd and 3^rd order harmonic distortions, we have shown that the TBOX scaling and GP improve the transistor linearity at lower drain currents (low-power applications) in advanced FD-SOI technology nodes. The physics behind this observation i.e the additional mobility limiting factors, is explained in detail by using well calibrated TCAD simulations.