Effects of HfO2 and Lanthanum Capping Layer Thickness on the Narrow Width Behavior of Gate First High-K and Metal Gate NMOS Transistors
Source
2013 International Conference on Solid State Devices and Materials
Date Issued
2005-07-05
Author(s)
Naresh, Satya Siva
Mohapatra, Nihar Ranjan
Duhan, Pardeep
Subjects
Gate length
HfO2
High-k/metal gates
Lanthanum Capping Layer
NMOS
Optimum parameters
Tungsten silicide