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  1. Home
  2. IIT Gandhinagar
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  4. EE Publications
  5. Enhancing breakdown voltage in Normally-OFF p-GaN HEMTs through ultra-thin AlN barrier layer
 
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Enhancing breakdown voltage in Normally-OFF p-GaN HEMTs through ultra-thin AlN barrier layer

Source
IEEE 7th International Conference on Emerging Electronics (ICEE 2025)
Date Issued
2025-12-13
Author(s)
Kumar, Priyesh
Saha, Jhuma  
DOI
10.1109/ICEE67165.2025.11409721
URI
https://repository.iitgn.ac.in/handle/IITG2025/34817
Subjects
HEMT
Breakdown voltage
Electric field
Ultra-thin barrier
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