An inverted-V channel P-type NsFET for improved performance per device footprint
Source
IEEE 7th International Conference on Emerging Electronics (ICEE 2025)
Date Issued
2025-12-13
Author(s)
Mohanty, Siddharth
Subjects
Nanosheet pFETs
Performance per Device Footprint
Effective hole mobility
Surface roughness
Acoustic phonon scattering
Optical phonon scattering