Physics-based parameter extraction methodology for channel doping gradient (CDG) LDMOS transistors based on HiSIM-HV2 model

A physics-based parameter extraction methodology based on HiSIM-HV2 model is developed to capture the effect of CDG on the performance of LDMOS transistors. The CDG shows up to 30% performance benefit. The physics behind this is investigated using TCAD simulations and the learning from the simulations is used to efficiently extract the model parameters. The spice simulations with extracted parameters further confirm advantage of CDG on circuit performance.