Sequential growth of Ag nanoparticles on ripple-patterned Si: Insights from GISAXS/GIWAXS and MD simulations
Source
Physica B Condensed Matter
ISSN
09214526
Date Issued
2026-01-30
Author(s)
Lamba, Tarundeep Kaur
Vashistha, Tejasva
Singh, Sharanjeet
Sooraj, K. P.
Augustine, Sebin
Vayalil, Sarathlal Koyiloth
Kumar, Dileep
Ranjan, Mukesh
Abstract
The spatial arrangement and morphology of metallic NPs critically influence performance in plasmonic and spintronic applications. Substrate topography, especially ion-irradiation induced ripple patterns, strongly affects NP nucleation, growth dynamics, and final geometry. For Ag-NPs on nanoripple silicon, assembly depends on deposition direction because the morphology is intrinsically asymmetric; GISAXS confirms one slope is steeper. Single-direction deposition promotes uniaxial, ellipsoidal Ag-NPs aligned in the ripple direction, whereas sequential deposition yields truncated NPs with more uniform spacing. GIWAXS indicates an FCC structure with preferred (111) and (200) orientations; d-spacings remain consistent at 0° and 90°, indicating structural stability. Molecular dynamics simulations support these findings, showing single-sided flux favors tilted, elongated growth, while sequential flux forms near-spherical NPs near ridge regions and distributes them across slopes. Together, experiment and simulation establish how coupling surface asymmetry with deposition geometry governs NP shape, ordering, and crystallinity, offering a substrate-guided route to engineering isotropic assemblies.
Keywords
Atomic process | GISAXS/GIWAXS | MD simulation | Nanoparticles | Nanoripple
