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  5. Angstrom scale ionic memristors' Engineering with van der waals materials- a route to highly tunable memory states
 
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Angstrom scale ionic memristors' Engineering with van der waals materials- a route to highly tunable memory states

Source
arXiv
ISSN
2331-8422
Date Issued
2024-12-01
Author(s)
Dhal, Biswabhusan
Animesh, Puzari
Yeh, Li-Hsien
Kalon, Gopinadhan
Abstract
Memristors that mimic brain functions are crucial for energy-efficient neuromorphic devices. Ion channels that emulate biological synapses are still in the early stages of development, especially the tunability of memory states. Here, we demonstrate that cations such as K+, Na+, Ca2+, and Al3+ intercalated in the interlayer spaces of vermiculite, result in highly confined channels of size 3-5 Å. They host exotic memristor properties through ion exchange dynamics, even at high salt concentrations of 1 M. The bipolar memristor characteristics observed are tunable with frequency, geometric asymmetry, ion concentration, and intercalants. Notably, we observe polarization-flipping memristor behavior in two cases: one with Al3+ ions and another with devices having a geometric asymmetry ratio greater than 15. This inversion is attributed to the over-screening of counter-ions due to their accumulation at the channel entrance. Our results suggest that ion exchange dynamics, ion-ion interactions, and ion accumulation/depletion mechanisms, particularly with multivalent ions, can be harnessed to develop advanced memristor devices.
URI
http://arxiv.org/abs/2412.05051
http://repository.iitgn.ac.in/handle/IITG2025/18555
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