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  5. Insights into the threshold voltage variability in back-gated WSe2 FETs: a multi-scale device modeling approach
 
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Insights into the threshold voltage variability in back-gated WSe2 FETs: a multi-scale device modeling approach

Source
IEEE 7th International Conference on Emerging Electronics (ICEE 2025)
Date Issued
2025-12-13
Author(s)
Sinha, Soham
Tewari, Mohit
Agarwal, Tarun  
DOI
10.1109/ICEE67165.2025.11409927
URI
https://repository.iitgn.ac.in/handle/IITG2025/34828
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