Process-induced uniaxial strain in Nanosheet-FET based CMOS technology-is it still beneficial?

This paper studies the effect of process-induced uniaxial strain on the performance of Gate-All-Around Nanosheet FETs (GAANS) using k.p and BTE simulations. It is shown that mobility and performance in confined n-type GAANS is limited by acoustic phonon and surface roughness scattering. The tensile channel stress enhances the performance to certain extent. The confined p-type GAANS exhibits very low mobility. The compressive channel stress although boosts hole mobility, could not fully revive performance of confined structures.