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Home
IIT Gandhinagar
Electrical Engineering
EE Publications
Process-induced uniaxial strain in Nanosheet-FET based CMOS technology-is it still beneficial?
Details
Process-induced uniaxial strain in Nanosheet-FET based CMOS technology-is it still beneficial?
Source
7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM 2023)
Date Issued
2023-03-07
Author(s)
Kaur, Ramandeep
Mohapatra, Nihar Ranjan
URI
http://repository.iitgn.ac.in/handle/IITG2025/30835