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  4. Accelerated Bit Slicing Technique for In-Memory Computing Using Multi-Input Resistive Random Access Memory
 
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Accelerated Bit Slicing Technique for In-Memory Computing Using Multi-Input Resistive Random Access Memory

Source
IEEE Electron Devices Technology and Manufacturing Conference Strengthening the Globalization in Semiconductors Edtm 2024
Date Issued
2024-01-01
Author(s)
Sakhuja, Jayatika
Joglekar, Radhika
Lashkare, Sandip 
Ganguly, Udayan
DOI
10.1109/EDTM58488.2024.10511444
Abstract
Recently, there has been a strong focus on enhancing computing efficiency with emerging memristor devices. In this paper, we propose accelerated bit-slicing technique using multi-input memristor in crossbar arrays. First, we demonstrate bit slicing in standard 2-terminal(T) PCMORRAM, wherein each bit (of n-bit input) is serially computed. Second, we introduce 3T-RRAM (two-inputs), allowing simultaneous computation of 2-bits resulting in reduction of processing cycles. Lastly, accelerated computation of 6-bit input in 3-cycles is demonstrated with 3T-RRAM.
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URI
https://d8.irins.org/handle/IITG2025/29201
Subjects
3T-RRAM | bit slicing | IMC | PCMO | VMM
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