Simulation and analysis of contact resistance in AIGaN/GaN HEMT devices
Source
Indian Institute of Technology, Gandhinagar
Date Issued
2018-01-01
Author(s)
Kiran, Chakka Yaswanth Sai
Subjects
Semiconductor Devices
16210028
High Temperature
Saturation Velocity
Two-dimensional Electron Gas
Fabricated Device
Semiconductor Devices
