Influence of zinc interstitials and oxygen vacancies in carrier concentrations of Al doped ZnO thin films fabricated by sol-gel spin coating

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dc.contributor.author Bandaru, Narendra
dc.contributor.author Panda, Emila
dc.contributor.other International Conference on Functional Materials (ICFM - 2016)
dc.coverage.spatial Indian Institute of Technology Kharagpur, IN
dc.date.accessioned 2016-12-27T11:27:42Z
dc.date.available 2016-12-27T11:27:42Z
dc.date.issued 2016-12-12
dc.identifier.citation Bandaru, Narendra and Panda, Emila, "Influence of zinc interstitials and oxygen vacancies in carrier concentrations of Al doped ZnO thin films fabricated by sol-gel spin coating", in the International Conference on Functional Materials (ICFM - 2016), Indian Institute of Technology Kharagpur, IN, Dec. 12-14, 2016. en_US
dc.identifier.uri https://repository.iitgn.ac.in/handle/123456789/2590
dc.description.statementofresponsibility by Narendra Bandaru and Emila Panda
dc.language.iso en_US en_US
dc.title Influence of zinc interstitials and oxygen vacancies in carrier concentrations of Al doped ZnO thin films fabricated by sol-gel spin coating en_US
dc.type Article en_US


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