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  5. Sequential growth of Ag nanoparticles on ripple-patterned Si: Insights from GISAXS/GIWAXS and MD simulations
 
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Sequential growth of Ag nanoparticles on ripple-patterned Si: Insights from GISAXS/GIWAXS and MD simulations

Source
Physica B Condensed Matter
ISSN
09214526
Date Issued
2026-01-30
Author(s)
Lamba, Tarundeep Kaur
Vashistha, Tejasva
Singh, Sharanjeet
Sooraj, K. P.
Augustine, Sebin
Ranganathan, Raghavan  
Vayalil, Sarathlal Koyiloth
Kumar, Dileep
Ranjan, Mukesh
DOI
10.1016/j.physb.2025.418066
Volume
722
Abstract
The spatial arrangement and morphology of metallic NPs critically influence performance in plasmonic and spintronic applications. Substrate topography, especially ion-irradiation induced ripple patterns, strongly affects NP nucleation, growth dynamics, and final geometry. For Ag-NPs on nanoripple silicon, assembly depends on deposition direction because the morphology is intrinsically asymmetric; GISAXS confirms one slope is steeper. Single-direction deposition promotes uniaxial, ellipsoidal Ag-NPs aligned in the ripple direction, whereas sequential deposition yields truncated NPs with more uniform spacing. GIWAXS indicates an FCC structure with preferred (111) and (200) orientations; d-spacings remain consistent at 0° and 90°, indicating structural stability. Molecular dynamics simulations support these findings, showing single-sided flux favors tilted, elongated growth, while sequential flux forms near-spherical NPs near ridge regions and distributes them across slopes. Together, experiment and simulation establish how coupling surface asymmetry with deposition geometry governs NP shape, ordering, and crystallinity, offering a substrate-guided route to engineering isotropic assemblies.
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URI
http://repository.iitgn.ac.in/handle/IITG2025/33515
Keywords
Atomic process | GISAXS/GIWAXS | MD simulation | Nanoparticles | Nanoripple
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